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MUN5332DW1 Datasheet, PDF (4/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5332DW1, NSBC143EPDXV6
1
IC/IB = 10
1000
VCE = 10 V
100
25C
150C
−55C
0.1
150C
10
25C
−55C
1
0.01
0.1
0
10
20
30
40
50
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat), vs. IC
Figure 3. DC Current Gain
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
IE = 0 A
TA = 25C
100
150C
10
25C
−55C
1
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.1
VO = 5 V
0.01
50
0
1
2
3
4
5
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
10
−55C
25C
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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