MTP10N10E Datasheet, PDF (7/8 Pages) Motorola, Inc – TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

1250
C_iss
1000
750
MTP10N10E
10
T_J = 25°C
8
C_oss
6
500
C_iss
4
250
C_oss
2
0
20
10
0
10
V_GS
V_DS
C_rss
0
20
30
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
V_DS = 30 V
50 V
T_J = 25°C
80 V
I_D = RATED I_D
4
8
12
16
20
Q_G, TOTAL GATE CHARGE (nC)
Figure 17. Gate Charge versus
Gate−To−Source Voltage
+18 V
47 k
V_in
15 V
100 k
2N3904
47 k
1 mA
2N3904
V_DD
10 V ^{100 k}
0.1 μF
SAME
DEVICE TYPE
AS DUT
FERRITE
100
BEAD
DUT
V_in = 15 V_pk; PULSE WIDTH ≤ 100 μs, DUTY CYCLE ≤ 10%
Figure 18. Gate Charge Test Circuit
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