MTP10N10E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

MTP10N10E
Preferred Device
Power MOSFET
10 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers drain−to−source diodes with fast recovery times. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical, and offer additional safety margin
against unexpected voltage transients.
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor − Absorbs High Energy in the Avalanche Mode
− Unclamped Inductive Switching (UIS) Energy Capability Specified
at 100°C
• Commutating Safe Operating Area (CSOA) Specified for Use in Half
and Full Bridge Circuits
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
Drain Current − Continuous
Drain Current − Pulsed
Total Power Dissipation
Derate above 25°C
V_DSS
100
V_DGR
100
V_GS
± 20
I_D
10
I_DM
25
P_D
75
0.6
Operating and Storage Temperature
Range
T_J, T_stg
−65 to
150
Thermal Resistance
− Junction to Case
− Junction to Ambient°
R_θJC
R_θJA
1.67
62.5
Maximum Lead Temperature for Soldering
T_L
275
Purposes, 1/8″ from case for 5 seconds
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
°C
http://onsemi.com
10 AMPERES
100 VOLTS
R_DS(on) = 250 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP10N10E
LLYWW
1
Gate
3
Source
2
Drain
MTP10N10E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP10N10E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
MTP10N10E/D