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MMDF2C01HD Datasheet, PDF (7/16 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
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MMDF2C01HD
2000
1600 Ciss
1200
N−Channel
VDS = 0 V VGS = 0 V
TJ = 25°C
800 Crss
Ciss
400
Coss
Crss
0
8
4
0
4
VGS
VDS
8
12
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2000
1600 Ciss
P−Channel
VDS = 0 V VGS = 0 V
TJ = 25°C
1200
Crss
800
Ciss
400
Coss
0
Crss
8
4
0
4
8
12
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
5
10
QT
4
3
Q1
2
VDS
Q2
8
VGS
6
ID = 4 A
4
TJ = 25°C
1
2
Q3
0
0
0
2
4
6
8
10
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
5
10
QT
4
8
VDS
3
VGS
6
2 Q1
Q2
ID = 2 A
4
TJ = 25°C
1
2
Q3
0
0
0
2
4
6
8
10
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
100
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25°C
10
tr
tf
td(off)
td(on)
1000
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25°C
100
td(off)
tf
tr
td(on)
1
0.1
1
10
10
100
1
10
100
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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