MMDF2C01HD Datasheet, PDF (5/16 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

MMDF2C01HD
TYPICAL ELECTRICAL CHARACTERISTICS
0.07
T_J = 25°C
I_D = 2 A
0.06
0.05
0.04
N−Channel
0.35
T_J = 25°C
I_D = 1 A
0.30
0.25
0.20
0.15
P−Channel
0.03
0.1
0
2
4
6
8
0
2
4
6
8
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.050
T_J = 25°C
0.30
T_J = 25°C
0.045
V_GS = 2.7 V
0.25
0.040
4.5 V
0.035
0.20
V_GS = 2.7 V
4.5 V
0.15
0.030
0
2
4
6
8
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
V_GS = 4.5 V
1.5
I_D = 4 A
0.10
0
0.8
1.6
2.4
3.2
4
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
V_GS = 4.5 V
1.5
I_D = 2 A
1
1
0.5
0.5
0
−50 −25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0
−50 −25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
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