BC846BPDW1T1 Datasheet, PDF (7/10 Pages) ON Semiconductor – Dual General Purpose Transistors(NPN/PNP Duals)

BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES
2.0
1.5 VCE = −10 V
T_A = 25°C
1.0
0.7
0.5
0.3
0.2
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I_C, COLLECTOR CURRENT (mAdc)
Figure 19. Normalized DC Current Gain
−1.0
−0.9 T_A = 25°C
−0.8
V_BE(sat) @ I_C/I_B = 10
−0.7
−0.6
V_BE(on) @ V_CE = −10 V
−0.5
−0.4
−0.3
−0.2
−0.1
V_CE(sat) @ I_C/I_B = 10
0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
I_C, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 20. “Saturation” and “On” Voltages
−2.0
T_A = 25°C
−1.6
−1.2
−0.8
I_C =
−10 mA
−0.4
I_C = −50 mA
I_C = −20 mA
I_C = −200 mA
I_C = −100 mA
0
−0.02
−0.1
−1.0
I_B, BASE CURRENT (mA)
−10 −20
Figure 21. Collector Saturation Region
10
C_ib
7.0
T_A = 25°C
5.0
3.0
C_ob
2.0
1.0
−0.4 −0.6
−1.0 −2.0 −4.0 −6.0 −10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 23. Capacitances
−20 −30 −40
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.2
−1.0
−10
−100
I_C, COLLECTOR CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
400
300
200
150
V_CE = −10 V
T_A = 25°C
100
80
60
40
30
20
−0.5
−1.0 −2.0 −3.0 −5.0
−10 −20 −30 −50
I_C, COLLECTOR CURRENT (mAdc)
Figure 24. Current−Gain − Bandwidth Product
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