BC846BPDW1T1 Datasheet, PDF (1/10 Pages) ON Semiconductor – Dual General Purpose Transistors(NPN/PNP Duals)

BC846BPDW1T1,
BC847BPDW1T1 Series,
BC848CPDW1T1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complimentary)
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS − NPN
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC846
BC847
BC848
V_CEO
Collector-Base Voltage
BC846
BC847
BC848
V_CBO
Emitter−Base Voltage
Collector Current − Continuous
MAXIMUM RATINGS − PNP
V_EBO
I_C
Rating
Symbol
65
45
30
80
50
30
6.0
100
Value
V
V
V
mAdc
Unit
MARKING
DIAGRAM
6
SOT−363
CASE 419B
XX^d
1
STYLE 1
1
xx = Device Code
d = Date Code
Collector-Emitter Voltage BC846 V_CEO
−65
V
BC847
−45
BC848
−30
ORDERING INFORMATION
Collector-Base Voltage
BC846 V_CBO
−80
BC847
−50
BC848
−30
V
Device
Mark Package Shipping^†
BC846BPDW1T1 BB SOT−363 3000 Units/Reel
Emitter−Base Voltage
V_EBO
−5.0
V
Collector Current − Continuous
I_C
−100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
BC847BPDW1T1 BF SOT−363 3000 Units/Reel
BC847BPDW1T1G _BF SOT−363 3000 Units/Reel
(Pb−Free)
BC847CPDW1T1 BG SOT−363 3000 Units/Reel
BC848CPDW1T1 BL SOT−363 3000 Units/Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P_D
Per Device
FR−5 Board (Note 1) T_A = 25°C
Derate above 25°C
380
mW
250
3.0
mW/°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Thermal Resistance,
Junction−to−Ambient
R_qJA
328
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 3
Publication Order Number:
BC846BPDW1T1/D