NTTD4401F Datasheet, PDF (6/8 Pages) ON Semiconductor – FETKY Power MOSFET and Schottky Diode

NTTD4401F
1
D = 0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
Single Pulse
0.01
1E−03
1E−02
Normalized to R_∅ja at Steady State (1 inch pad)
0.0125 Ω 0.0563 Ω 0.110 Ω 0.273 Ω 0.113 Ω 0.436 Ω
0.021 F 0.137 F 1.15 F
2.93 F 152 F
261 F
1E−01
1E+00
t, TIME (s)
1E+03
Figure 13. FET Thermal Response
1E+02
1E+03
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
10
T_J = 125°C
T_J = 125°C
1.0
85°C
25°C
1.0
85°C
25°C
−40 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 14. Typical Forward Voltage
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
V_F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Maximum Forward Voltage
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