NTTD4401F Datasheet, PDF (1/8 Pages) ON Semiconductor – FETKY Power MOSFET and Schottky Diode

NTTD4401F
FETKYtPower MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8t Package
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
• Low V_F and Low Leakage Schottky Diode
• Lower Component Placement and Inventory Costs along with Board
Space Savings
• Logic Level Gate Drive – Can be Driven by Logic ICs
Applications
• Buck Converter
• Synchronous Rectification
• Low Voltage Motor Control
• Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
−10
V
Continuous Drain
Current (Note 1)
T_A = 25°C
I_D
T_A = 100°C
3.3
A
2.1
Power Dissipation Steady T_A = 25°C
P_D
(Note 1)
State
1.42
W
Continuous Drain
Current (Note 2)
T_A = 25°C
I_D
T_A = 100°C
Power Dissipation Steady T_A = 25°C
P_D
(Note 2)
State
2.4
A
1.5
0.78
W
Pulsed Drain
Current
t = 10 ms
I_DM
10
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to 150 °C
Single Pulse Drain−to−Source
Avalanche Energy
Starting T_A = 25°C (t v 10 s)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
T_L
150
mJ
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
http://onsemi.com
MOSFET PRODUCT SUMMARY
V_(BR)DSS
−20 V
R_DS(on) Typ
70 mW @ −4.5 V
100 mW @ −2.7 V
I_D Max
−3.3 A
−2.7 A
SCHOTTKY DIODE SUMMARY
V_R Max
I_F Max
V_F Max
20 V
2.0 A
600 mV @ I_F = 2.0 A
S
A
G
D
P−Channel MOSFET
C
SCHOTTKY DIODE
8
1
Micro8
CASE 846A
MARKING DIAGRAM
& PIN CONNECTIONS
ANODE 1
ANODE 2
SOURCE 3
GATE ₄
YWW
BG
8 CATHODE
7 CATHODE
6 DRAIN
5 DRAIN
(Top View)
Y = Year
WW = Work Week
BG = Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTTD4401FR2 Micro8 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 3
Publication Order Number:
NTTD4401F/D