NSM4002MR6 Datasheet, PDF (6/7 Pages) ON Semiconductor – Dual NPN Transistors for Driving LEDs

300
150°C
200 _25°C
100 ^{−55°C}
NSM4002MR6
TYPICAL CHARACTERISTICS − Q2
V_CE = 1 V
1
I_C/I_B = 10
0.1
150°C
25°C
−55°C
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
1.1
1.0
I_C/I_B = 10
0.9
0.8
0.7
−55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 V_CE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
1.0
T_J = 25°C
0.8
0.6
0.4
I_C = 10 mA
100 mA 300 mA
500 mA
0.2
0
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 12. Saturation Region
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