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NSM4002MR6 Datasheet, PDF (2/7 Pages) ON Semiconductor – Dual NPN Transistors for Driving LEDs
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NSM4002MR6
Table 1. ELECTRICAL CHARACTERISTICS Q1 (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VEB(OFF) = 3.0 Vdc)
Base Cutoff Current (VCE = 30 Vdc, VEB(OFF) = 3.0 Vdc)
ON CHARACTERISTICS
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
ICEX
−
IBL
−
DC Current Gain (Note 3)
(IC = 100 mA, VCE = 1.0 V)
(IC = 1.0 mA, VCE = 1.0 V)
(IC = 10 mA, VCE = 1.0 V)
(IC = 50 mA, VCE = 1.0 V)
(IC = 100 mA, VCE = 1.0 V)
Collector−Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
(IC = 50 mA, IB = 5.0 mA)
Base−Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
(IC = 50 mA, IB = 5.0 mA)
Cutoff Frequency (IC = 10 mA, VCE = 20 V, f = 100 MHz)
Output Capacitance (VCB = 5.0 V, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cobo
40
70
100
60
30
−
−
0.65
−
300
−
−
Max
Unit
−
Vdc
−
Vdc
−
Vdc
50
nAdc
50
nAdc
−
−
300
−
−
V
0.20
0.30
V
0.85
0.95
−
MHz
4.0
pF
8.0
pF
Table 2. ELECTRICAL CHARACTERISTICS Q2 (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
45
−
−
Vdc
V(BR)CBO
50
−
−
Vdc
V(BR)EBO
5.0
−
−
Vdc
ICBO
−
−
0.1
mAdc
DC Current Gain (Note 3)
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
hFE
250
−
600
40
−
−
Collector *Emitter Saturation Voltage (Note 3)
(IC = 500 mA, IB = 50 mA)
VCE(sat)
V
−
−
0.7
Base*Emitter Turn−on Voltage (Note 3)
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
V
−
−
1.2
Cutoff Frequency (IC = 10 mA, VCE = 5.0 V, f = 100 MHz
fT
100
−
−
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz
Cobo
−
10
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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