NCP1602 Datasheet, PDF (6/32 Pages) ON Semiconductor – Enhanced, High-Efficiency Power Factor Controller

NCP1602
Table 6. TYPICAL ELECTRICAL CHARACTERISTICS
(Conditions: V_CC = 18 V, T_J from −40°C to +125°C, unless otherwise specified) (Note 3)
Symbol
Rating
Min
Typ
Max Unit
REGULATION BLOCK
G_EA
Error Amplifier Gain
V_ctrl
V_ctrl,min
V_ctrl,max
VCTRL pin Voltage (V_ctrl):
− @ V_FB = 2 V (OTA is sourcing 20 mA)
− @ V_FB = 3 V (OTA is sinking 20 mA)
V_out,L / V_REF2
Ratio (V_out Low Detect Threshold / V_REF) (guaranteed by design)
H_out,L / V_REF2
Ratio (V_outLow Detect Hysteresis / V_REF) (guaranteed by design)
I_BOOST
VCTRL pin Source Current when (V_OUT Low Detect) is activated
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
110
200
290 mS
−
4.5
−
V
−
0.5
−
V
−
95.5
−
%
−
0.35
−
%
147
220
277 mA
V_CS(th)
Current Sense Voltage Reference
450
500
550 mV
V_CS,OVS(th)
Current Sense Overstress Voltage Reference
675
750
825 mV
t_LEB,OVS
“Overstress” Leading edge Blanking Time (guaranteed by design)
−
250
−
ns
t_LEB,OCP
“Over−Current Protection” Leading edge Blanking Time (guaranteed by design)
−
400
−
ns
t_OCP
Over−Current Protection Delay from V_CS/ZCD>V_CS(th) to
DRV low (dV_CS/ZCD / dt = 10 V/ms)
−
40
200
ns
V_ZCD(th)H
Zero Current Detection, V_CS/ZCD rising
8
35
62
mV
V_ZCD(th)L
Zero Current Detection, V_CS/ZCD falling
−68
−46
−25 mV
V_ZCD(hyst)
Hysteresis of the Zero Current Detection Comparator
46
84
−
mV
To discuss versus what esd protection will be used
V_CL(pos)
t_ZCD
t_SYNC
t_WDG
t_WDG(OS)
I_ZCD(gnd)
I_ZCD(Vcc)
STATIC OVP
CS/ZCD Positive Clamp @ I_CS/ZCD = 5 mA (guaranteed by design)
(V_CS/ZCD < V_ZCD(th)L) to (DRV high)
Minimum ZCD Pulse Width
Watch Dog Timer
Watch Dog Timer in “OverStress” Situation
Source Current for CS/ZCD pin impedance Testing
Pull−up current source referenced to V_cc for open pin detection
−
9.5
−
V
−
60
200
ns
−
110
200
ns
80
200
320
ms
400
800
1200 ms
−
50
−
mA
−
200
−
nA
D_MIN
Duty Cycle, V_FB = 3 V ( When low clamp of V_ctrl is reached)
ON−TIME CONTROL (3 options for maximum t_ON value)
t_on,LL,B
Maximum On Time, avg(V_cs) = 0.9 V and V_ctrl maximum (CrM)
t_on,LL,E
Maximum On Time, avg(V_cs) = 0.9 V and V_ctrl maximum (CrM)
t_on,LL,C
Maximum On Time, avg(V_cs) = 0.9 V and V_ctrl maximum (CrM)
t_on,LL,F
Maximum On Time, avg(V_cs) = 0.9 V and V_ctrl maximum (CrM)
t_on,HL,B
Maximum On Time, avg(V_cs) = 2.8 V and V_ctrl maximum (CrM)
t_on,HL,E
Maximum On Time, avg(V_cs) = 2.8 V and V_ctrl maximum (CrM)
t_on,HL,C
Maximum On Time, avg(V_cs) = 2.8 V and V_ctrl maximum (CrM)
t_on,HL,F
Maximum On Time, avg(V_cs) = 2.8 V and V_ctrl maximum (CrM)
K_{ton,LL−HL}
t_ON @LL over t_ON @HL ratio (all t_ON versions)
Specifying max t_ON,min means t_ON,min can go down to zero
t_on,LL,min
Minimum On Time, avg(V_cs) = 0.9 V
(not tested, guaranteed by design)
−
−
0
%
22.0
25.0
28.0 ms
11.4
12.5
13.6 ms
22.0
25.0
28.0 ms
11.4
12.5
13.6 ms
7.49
8.33
9.16 ms
3.75
4.17
4.59 ms
7.49
8.40
9.16 ms
3.75
4.20
4.59 ms
−
3
−
w/o
−
300
−
ns
3. The above specification gives the targeted values of the parameters. The final specification will be available once the complete circuit
characterization has been performed.
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