MTB36N06V Datasheet, PDF (6/10 Pages) Motorola, Inc – TMOS POWER FET 32 AMPERES 60 VOLTS

MTB36N06V
SAFE OPERATING AREA
1000 _{VGS = 20 V}
SINGLE PULSE
T_C = 25°C
100
R_DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 μs
10
100 μs
1 ms
10 ms
1
0.1
1
dc
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
225
200
I_D = 32 A
175
150
125
100
75
50
25
0
25
50
75
100
125
150
175
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.00
D = 0.5
0.2
0.1
0.10 ^0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
1.0E−03
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
1.0E−02
t, TIME (s)
1.0E−01
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) R_θJC(t)
1.0E+00
1.0E+01
Figure 13. Thermal Response
3
2.5
R_θJA = 50°C/W
Board material = 0.065 mil FR−4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
I_S
t_p
di/dt
t_rr
t_a
t_b
0.25 I_S
I_S
TIME
Figure 14. Diode Reverse Recovery Waveform
2.0
1.5
1
0.5
0
25
50
75
100
125
150
175
T_A, AMBIENT TEMPERATURE (°C)
Figure 15. D²PAK Power Derating Curve
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