MTB36N06V Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 32 AMPERES 60 VOLTS

MTB36N06V
TYPICAL ELECTRICAL CHARACTERISTICS
72
T_J = 25°C
54
36
V_GS = 10 V
9V
7V
8V
6V
18
5V
4V
0
0
1
2
3
4
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
72
V_DS ≥ 10 V
54
T_J = 100°C
25°C
36
18
−55°C
0
1
2
3
4
5
67
8
9
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.1
V_GS = 10 V
0.08
0.06
0.04
0.02
T_J = 100°C
25°C
− 55°C
0.052
T_J = 25°C
0.044
0.036
V_GS = 10 V
15 V
0
0
18
36
54
72
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.028
0
18
36
54
72
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
V_GS = 10 V
1.6 ^{ID = 16 A}
1.4
1.2
1000
V_GS = 0 V
T_J = 125°C
100
100°C
1
10
25°C
0.8
0.6
− 50 − 25
0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
3