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MMDF4N01HD Datasheet, PDF (6/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS | |||
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MMDF4N01HD
di/dt = 300 A/µs
Standard Cell Density
trr
High Cell Density
trr
tb
ta
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drainâtoâsource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, âTransient Thermal Resistance â
General Data and Its Use.â
Switching between the offâstate and the onâstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 µs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) â TC)/(RθJC).
A power MOSFET designated EâFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonâlinearly with an increase of peak current in avalanche
and peak junction temperature.
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 µs
100 µs
1 ms
10 ms
1
dc
RDS(on) LIMIT
0.1
THERMAL LIMIT
PACKAGE LIMIT
Mounted on 2â³ sq. FR4 board (1â³ sq. 2 oz. Cu 0.06â³
thick single sided) with one die operating, 10s max.
0.01
0.1
1
10
100
VDS, DRAINâTOâSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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