MMDF4N01HD Datasheet, PDF (3/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS

8
4.5 V
3.1 V
6 ^{2.7 V}
MMDF4N01HD
TYPICAL ELECTRICAL CHARACTERISTICS
V_GS = 8 V
2.3 V
2.5 V
T_J = 25°C
2.1 V
8
V_DS ≥ 10 V
6
4
1.9 V
1.7 V
2
1.5 V
0
0 0.2 0.4 0.6 0.8 1
1.3 V
1.2 1.4 1.6 1.8 2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
100°C
25°C
2
T_J = −55°C
0
1
1.2
1.4
1.6
1.8
2
2.2
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.07
T_J = 25°C
I_D = 2 A
0.06
0.050
T_J = 25°C
0.045
V_GS = 2.7 V
0.05
0.040
4.5 V
0.04
0.035
0.03
0
2
4
6
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
2
V_GS = 4.5 V
I_D = 4 A
1.5
0.030
8
0
2
4
6
8
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100
V_GS = 0 V
T_J = 125°C
1
10
100°C
0.5
0
−50 −25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0
2
4
6
8
10
12
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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