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CAT93C46R Datasheet, PDF (6/13 Pages) Catalyst Semiconductor – 1-Kb Microwire Serial EEPROM
CAT93C46R
SK
CS
STANDBY
DI
1
00
*
* ENABLE = 11
DISABLE = 00
Figure 5. EWEN/EWDS Instruction Timing
Write
After receiving a WRITE command, address and the data,
the CS (Chip Select) pin must be deselected for a minimum
of tCSMIN (See Design Note for details). The falling edge of
CS will start the self clocking clear and data store cycle of
the memory location specified in the instruction. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT93C46R can be determined by selecting the device and
polling the DO pin. Since this device features Auto−Clear
before write, it is NOT necessary to erase a memory location
before it is written into.
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
tCSMIN after the proper number of clock pulses (See Design
Note). The falling edge of CS will start the self clocking
clear cycle of the selected memory location. The clocking of
the SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93C46R can be determined by selecting the device and
polling the DO pin. Once cleared, the content of a cleared
location returns to a logical “1” state.
Erase All
Upon receiving an ERAL command, the CS (Chip Select)
pin must be deselected for a minimum of tCSMIN. The falling
edge of CS will start the self clocking clear cycle of all
memory locations in the device. The clocking of the SK pin
is not necessary after the device has entered the self clocking
mode. The ready/busy status of the CAT93C46R can be
determined by selecting the device and polling the DO pin.
Once cleared, the contents of all memory bits return to a
logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN. The falling edge of CS will start the self clocking
data write to all memory locations in the device. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT93C46R can be determined by selecting the device and
polling the DO pin. It is not necessary for all memory
locations to be cleared before the WRAL command is
executed.
Design Note
With CAT93C46R, after the last data bit has been
sampled, Chip Select (CS) must be brought Low before the
next rising edge of the clock (SK) in order to start the
self−timed high voltage cycle. This is important because if
the CS is brought low before or after this specific frame
window, the addressed location will not be programmed or
erased.
SK
tCS MIN
CS
AN AN−1
DI
101
A0 DN
D0
STATUS
VERIFY
STANDBY
tSV
BUSY
tHZ
DO
HIGH−Z
READY
HIGH−Z
tEW
Figure 6. Write Instruction Timing
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