CAT28F010N-15 Datasheet, PDF (6/16 Pages) ON Semiconductor – 1 Megabit CMOS Flash Memory

CAT28F010
A.C. CHARACTERISTICS, Program/Erase Operation
V_CC = +5V ±10%, unless otherwise specified.
\JEDEC Standard
Symbol Symbol Parameter
t_AVAV
t_AVWL
t_WLAX
t_DVWH
t_WHDX
t_ELWL
t_WHEH
t_WLWH
t_WHWL
t_WHWH1(2)
t_WHWH2(2)
t_WHGL
t_WC
t_AS
t_AH
t_DS
t_DH
t_CS
t_CH
t_WP
t_WPH
-
-
-
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
WE High Pulse Width
Program Pulse Width
Erase Pulse Width
Write Recovery Time
Before Read
t_GHWL
t_VPEL
Read Recovery Time
-
Before Write
-
V_PP Setup Time to CE
28F010-90
Min Typ Max
90
0
40
40
10
0
0
40
20
10
9.5
6
0
100
28F010-12
Min Typ Max
120
0
40
40
10
0
0
40
20
10
9.5
6
0
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
µs
µs
ns
ERASE AND PROGRAMMING PERFORMANCE ⁽¹⁾
28F010-90
28F010-12
Parameter
Chip Erase Time ⁽³⁾⁽⁵⁾
Min Typ Max Min Typ Max
Unit
0.5 10
0.5
10
Sec
Chip Program Time ⁽³⁾⁽⁴⁾
2 12.5
2
12.5
Sec
Note:
(1) Please refer to Supply characteristics for the value of V_PPH and V_PPL. The V_PP supply can be either hardwired or switched. If V_PP is
switched, V_PPL can be ground, less than V_CC + 2.0V or a no connect with a resistor tied to ground.
(2) Program and Erase operations are controlled by internal stop timers.
(3) ‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25°C, 12.0V V_PP.
(4) Minimum byte programming time (excluding system overhead) is 16 µs (10 µs program + 6 µs write recovery), while maximum is 400 µs/
byte (16 µs x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since
most bytes program significantly faster than the worst case byte.
(5) Excludes 00H Programming prior to Erasure.
Doc. No. MD-1019, Rev. G
6
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Characteristics subject to change without notice