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| CAT28F010N-15 Datasheet, PDF (4/16 Pages) ON Semiconductor – 1 Megabit CMOS Flash Memory | |||
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CAT28F010
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified.
Symbol
ILI
Parameter
Input Leakage Current
Limits
Min.
Max.
Unit
±1
µA
ILO
Output Leakage Current
±1
µA
ISB1
VCC Standby Current CMOS
100
µA
ISB2
VCC Standby Current TTL
ICC1
VCC Active Read Current
1
mA
30
mA
ICC2(1) VCC Programming Current
15
mA
ICC3(1) VCC Erase Current
15
mA
ICC4(1) VCC Prog./Erase Verify Current
15
mA
IPPS
IPP1
IPP2(1)
VPP Standby Current
VPP Read Current
VPP Programming Current
±10
µA
200
µA
30
mA
IPP3(1) VPP Erase Current
30
mA
IPP4(1) VPP Prog./Erase Verify Current
5
mA
VIL
Input Low Level TTL
â0.5
0.8
V
VILC
Input Low Level CMOS
â0.5
0.8
V
VOL
Output Low Level
0.45
V
VIH
Input High Level TTL
2
VCC+0.5
V
VIHC
Input High Level CMOS
VCC*0.7 VCC+0.5
V
VOH1 Output High Level TTL
2.4
V
VOH2 Output High Level CMOS
VCCâ0.4
V
VID
A9 Signature Voltage
11.4
13
V
IID(1)
A9 Signature Current
200
µA
VLO
VCC Erase/Prog. Lockout Voltage
2.5
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Test Conditions
VIN = VCC or VSS
VCC = 5.5V, OE = VIH
VOUT = VCC or VSS,
VCC = 5.5V, OE = VIH
CE = VCC ±0.5V,
VCC = 5.5V
CE = VIH, VCC = 5.5V
VCC = 5.5V, CE = VIL,
IOUT = 0mA, f = 6 MHz
VCC = 5.5V,
Programming in Progress
VCC = 5.5V,
Erasure in Progress
VCC = 5.5V, Program or
Erase Verify in Progress
VPP = VPPL
VPP = VPPH
VPP = VPPH,
Programming in Progress
VPP = VPPH,
Erasure in Progress
VPP = VPPH, Program or
Erase Verify in Progress
IOL = 5.8mA, VCC = 4.5V
IOH = â2.5mA, VCC = 4.5V
IOH = â400µA, VCC = 4.5V
A9 = VID
A9 = VID
Doc. No. MD-1019, Rev. G
4
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
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