AMIS-39100 Datasheet, PDF (6/12 Pages) AMI SEMICONDUCTOR – Octal High Side Driver with Protection

Top PCB view
5 mm
5 mm
5 mm
GND copper
5 mm
AMIS−39100
Bottom PCB view
114.3
Ground plane GND copper
25 % filled by GND copper
114.3
76.2
76.2
Figure 3. Layout Recommendation for Thermal Characteristics
ELECTRICAL AND ENVIRONMENTAL RATINGS
ELECTRICAL PARAMETERS
Operation outside the operating ranges for extended periods may affect device reliability. Total cumulative dwell time above
the maximum operating rating for the power supply or temperature must be less than 100 hours.
The parameters below are independent from load type (see Section “Load Specific Parameters”).
Table 7. ELECTRICAL CHARACTERISTICS
Symbol
Description
Min
Max
Unit
I_VB_norm (Note 8)
Consumption on VB Without Load Currents
In Normal Mode of Operation PDB = High
3.5
mA
I_PDB_3.3 (Notes 8 and 9)
I_PDB_5 (Notes 8 and 9)
I_PDB_MAX_VB
Sum of VB and V_DDN Consumption in Powerdown Mode of Operation
PDB = Low, V_DDN 3.3 V, VB = 12 V, 23°C Ambient
CLK and WR are at V_DDN Voltage
Sum of VB and V_DDN Consumption in Powerdown Mode of Operation
PDB = low, V_DDN 5 V, VB = 24 V, 23°C Ambient
CLK and WR are at V_DDN Voltage
VB Consumption in Powerdown Mode of Operation PDB = Low, VB = 16 V
25
mA
40
mA
10
mA
I_VDDN_norm (Note 8)
R_on_1 − 8
I_OUT_lim_x (Note 8)
Consumption on V_DDN
In Normal Mode of Operation PDB = High
CLK is 500 kHz, V_DDN = 5.5 V, VB = 16 V
On Resistance of the Output Drivers 1 through 8
Vb= 16 V (Normal Battery Conditions and T_A = 25°C)
Vb = 4.6 V (Worst Case Battery Condition and T_A = 25°C)
Internal Overcurrent Limitation of HS Driver Outputs
1.6
mA
W
1
3
0.65
2
A
T_shortGND_HSdoff
The Time from Short of HS Driver OUTx Pin to GND and the Driver
5.4
ms
Deactivation; Driver is Off; Detection Works from VB Minimum of 7 V;
VDDN Minimum is 3 V
TSD_H (Note 8)
High TSD Threshold for Junction Temperature (Temperature Rising)
130
170
°C
TSD_HYST
TSD Hysteresis for Junction Temperature
9
18
°C
8. The power dissipation of the chip must be limited not to exceed maximum junction temperature T_J.
9. The cumulative operation time mentioned above may cause permanent device failure.
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