AMIS-30600 Datasheet, PDF (6/11 Pages) AMI SEMICONDUCTOR – LIN Transceiver

AMIS−30600
Table 5. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN V13 V_CC = 4.75 V to 5.25 V; V_BB = 7.3 V to 18 V,V_EN
< V_ENon, T_A = −40°C to +125°C; R_L = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2]
6.8 nF 600 W / [L3] 10 nF 500 W.
Symbol
Parameter
Conditions
Min Typ
Max Unit
t_slope_F
Slope Time Falling Edge; (Note 5)
See Figure 5
4
−
24
ms
t_slope_R
Slope Time Rising Edge; (Note 5)
See Figure 5
4
−
24
ms
t_slope_Sym Slope Time Symmetry; (Note 5)
t_slope_F − t_slope_R
−8
−
+8
ms
T_rec_F
Propagation Delay Bus Dominant to
RxD = Low; (Note 6)
See Figures 4 and 5
2
6
ms
T_rec_R
Propagation Delay Bus Recessive to
RxD = High; (Note 6)
See Figures 4 and 5
6
6
ms
t_WAKE
Wake−up Delay Time
5. Guaranteed by design; not measured for all supply/load combinations on ATE.
6. Not measured on ATE.
30
100
200
ms
Table 6. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN v2.0 V_CC = 4.75 V to 5.25 V; V_BB = 7.3 V to
18 V,V_EN < V_ENon, T_A = −40°C to +125°C; R_L = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF
1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W.
Symbol
Parameter
Conditions
Min Typ Max Unit
DYNAMIC RECEIVER CHARACTERISTICS ACCORDING TO LIN v2.0
trx_pdr
Propagation Delay Bus Dominant to
RxD = Low; (Note 7)
See Figure 6
6
ms
trx_pdf
Propagation Delay Bus Recessive to
RxD = High; (Note 7)
See Figure 6
6
ms
trx_sym
Symmetry of Receiver Propagation Delay
trx_pdr − trx_pdf
−2
−
+2
ms
DYNAMIC TRANSMITTER CHARACTERISTICS ACCORDING TO LIN v2.0
D1
Duty Cycle 1 = t_{Bus_rec(min)}/(2 x t_Bit);
See Figure
0.396
0.5
D1
Duty Cycle 1 = t_{Bus_rec(min)}/(2 x t_Bit);
See Figure 6
D2
Duty Cycle 2 = t_{Bus_rec(max)}/(2 x t_Bit);
See Figure 6
7. Not measured on ATE.
THRec(max) = 0.744 x V_bat;
THDom(max) = 0.581 x V_bat;V_bat
= 7.0 V to 18 V; t_Bit = 50 ms
THRec(max) = 0.744 x V_bat;
THDom(max) = 0.581 x V_bat;V_bat
= 7.0V; t_Bit = 50 ms;
t_amb = −40°C
THRec(min) = 0.284 x V_bat;
THDom(min) = 0.422 x V_bat;V_bat
= 7.6 V to 18 V; t_Bit = 50 ms;
0.366
0.5
0.5
0.581
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