TIP32CG Datasheet, PDF (5/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
500
300
T_J = 150°C
100
25°C
70
−55 °C
50
30
V_CE = 2.0 V
2.0
1.6
1.2
I_C = 0.3 A
1.0 A
0.8
T_J = 25°C
3.0 A
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.4
0
3.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
I_B, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
T_J = 25°C
1.2
1.0
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 2.0 V
0.4
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
2.0 3.0
+2.5
+2.0
*APPLIES FOR I_C/I_B ≤ h_FE/2
+1.5
T_J = −65°C TO +150°C
+1.0
+0.5
*q_VC FOR V_CE(sat)
0
−0.5
−1.0
−1.5
q_VB FOR V_BE
−2.0
−2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0
I_C, COLLECTOR CURRENT (AMP)
2.0 3.0
Figure 11. Temperature Coefficients
10³
V_CE = 30 V
10²
10¹
T_J = 150°C
10⁰
100°C
10^−1
REVERSE
FORWARD
10^−2
25°C
10^−3
−0.4 −0.3 −0.2 −0.1
I_CES
0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
10⁷
10⁶
10⁵
I_C ≈ I_CES
I_C = 10 x I_CES
V_CE = 30 V
10⁴
I_C = 2 x I_CES
10³
10²
20
(TYPICAL I_CES VALUES
OBTAINED FROM FIGURE 12)
40
60
80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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