TIP32CG Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• Collector−Emitter Saturation Voltage −
V_CE(sat) = 1.2 Vdc (Max) @ I_C = 3.0 Adc
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 40 Vdc (Min) − TIP31, TIP32
= 60 Vdc (Min) − TIP31A, TIP32A
= 80 Vdc (Min) − TIP31B, TIP32B
= 100 Vdc (Min) − TIP31C, TIP32C
• High Current Gain − Bandwidth Product
f_T = 3.0 MHz (Min) @ I_C = 500 mAdc
• Compact TO−220 AB Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector − Emitter Voltage TIP31, TIP32 VCEO}
40
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{TIP31A, TIP32A}
60
TIP31B, TIP32B
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TIP31C, TIP32C}
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Base Voltage}
TIP31, TIP32 V_CB
TIP31A, TIP32A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TIP31B, TIP32B}
TIP31C, TIP32C
40
Vdc
60
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
V_EB
Continuous
I_C
Peak
5.0
Vdc
3.0
Adc
5.0
Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
I_B
1.0
Adc
P_D
40
W
0.32
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation
@ T_A = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
P_D
2.0
W
0.016 _{W/_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Unclamped Inductive Load Energy (Note 1)}
E
32
mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
T_J, T_stg – 65 to
_C
+ 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings are those values beyond which device damage can occur.}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings applied to the device are individual stress limit values (not}
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. I_C = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V_CC = 10 V, R_BE = 100 W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 10
http://onsemi.com
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 1
TIP3xxG
AYWW
TIP3xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
TIP31A/D