TIP140_05 Datasheet, PDF (5/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
20
10
7.0
5.0
3.0
dc
2.0 _{TJ = 150°C}
SECONDARY BREAKDOWN LIMIT
1.0
BONDING WIRE LIMIT
THERMAL LIMITATION @ T_C = 25°C
0.2
10
15 20
TIP140, 145
TIP141, 146
TIP142, 147
30
50
70
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Active−Region Safe Operating Area
15
10
7.0
5.0
100 mJ
2.0
1.0
0.5 1.0 2.0 5.0 10 20 50 100
L, UNCLAMPED INDUCTIVE LOAD (mH)
Figure 7. Unclamped Inductive Load
INPUT
MPS−U52
50
50
R_BB1
1.5 k
R_BB2
= 100
V_BB2 = 0
V_BB1 = 10 V
V_CE MONITOR
100 mH
TUT
V_CC = 20 V
I_C
MONITOR
R_S = 0.1
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
V_CE(sat)
−20 V
COLLECTOR
VOLTAGE
w ≈ 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
TEST CIRCUIT
NOTE 1: Input pulse width is increased until I_CM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
V_(BR)CER
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
http://onsemi.com
5