TIP140_05 Datasheet, PDF (4/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
NPN
TIP140, TIP141, TIP142
5000
T_J = 150°C
100°C
2000
25°C
−55 °C
1000
TYPICAL CHARACTERISTICS
PNP
TIP145, TIP146, TIP147
20,000
T_J = 150°C
10,000
100°C
7000
25°C
5000
−55 °C
3000
500
300
0.5
V_CE = 4.0 V
2000
V_CE = 4.0 V
1.0
2.0 3.0 4.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPS)
1000
0.5 0.7 1.0
2.0 3.0 4.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
5.0
5.0
3.0
3.0
2.0
I_C = 10 A, I_B = 4.0 mA
2.0
I_C = 10 A, I_B = 4.0 mA
I_C = 5.0 A, I_B = 10 mA
I_C = 5.0 A, I_B = 10 mA
1.0
1.0
I_C = 1.0 A, I_B = 2.0 mA
0.7
0.7
I_C = 1.0 A, I_B = 2.0 mA
0.5
−75 −50 −25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
0.5
−75 −50 −25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 4. Collector−Emitter Saturation Voltage
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
−75
4.0
V_CE = 4.0 V
3.6
3.2
V_CE = 4.0 V
2.8
2.4
I_C = 10 A
2.0
I_C = 10 A
5.0 A
1.6
5.0 A
−25
25
1.0 A
1.2
0.8
75
125
175
−75
−25
25
1.0 A
75
125
175
T_J, JUNCTION TEMPERATURE (°C)
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. Base−Emitter Voltage
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