TIP110_05 Datasheet, PDF (5/8 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE−REGION SAFE−OPERATING AREA
10
10
4.0
1 ms
2.0
5 ms
T_J = 150°C
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T_C = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V_CEO
0.1
1.0
10
TIP115
TIP116
TIP117
40
60 80 100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. TIP115, 116, 117
4.0
2.0
T_J = 150°C
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T_C = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V_CEO
0.1
1.0
10
TIP110
TIP111
TIP112
60 80 100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. TIP110, 111, 112
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T_J(pk) = 150_C;
T_C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
< 150_C. T_J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
T_C = 25°C
100
70
50
C_ob
30
C_ib
20
PNP
NPN
10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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