TIP110_05 Datasheet, PDF (1/8 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors

TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
TIP111, TIP112, TIP116, and TIP117 are Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
h_FE = 2500 (Typ) @ I_C
= 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
V_CEO(sus) = 60 Vdc (Min) − TIP110, TIP115
= 80 Vdc (Min) − TIP111, TIP116
= 100 Vdc (Min) − TIP112, TIP117
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 2.5 Vdc (Max) @ I_C
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
http://onsemi.com
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 1
TIP11xG
AYWW
TIP11x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
TIP110/D