NTHS4101P_12 Datasheet, PDF (5/6 Pages) ON Semiconductor – Power MOSFET

NTHS4101P
PACKAGE DIMENSIONS
H_E
e1
ChipFETt
CASE1206A−03
ISSUE K
D
8765
1234
q
E
L
5678
4321
b
c
e
RESET
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
MILLIMETERS
DIM MIN NOM MAX
A 1.00
1.05
1.10
b 0.25
0.30
0.35
c
0.10
0.15
0.20
D 2.95
3.05
3.10
E 1.55
1.65
1.70
e
0.65 BSC
e1
0.55 BSC
L 0.28
0.35
0.42
H E 1.80
1.90
2.00
q
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.011
0.071
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5° NOM
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
2.032
1
0.08
SOLDERING FOOTPRINT
1
2.032
0.08
2.362
0.093
0.65
0.025
PITCH
2.362
0.093
1.727
0.068
0.457
8X
0.018
8X
0.66
0.026
Basic Style
ǒ mm Ǔ
inches
0.457
2X _0.018
Style 1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2X
0.66
0.026
ǒ mm Ǔ
inches
http://onsemi.com
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