NTD20P06L_16 Datasheet, PDF (5/7 Pages) ON Semiconductor – Power MOSFET

NTD20P06L, NTDV20P06L
1000
100
V_GS = −15 V
Single Pulse
T_C = 25°C
100
10
1
10 ms
1
0.1
0.1
dc
R_DS(on) Limit
Thermal Limit
Package Limit
1
10
100
−V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
350
I_D = −15 A
300
250
200
150
100
50
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
D = 0.5
1
0.2
0.1
0.05
0.1 _0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping^†
NTD20P06LG
75 Units / Rail
NTD20P06LT4G
NTDV20P06LT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
2500 / Tape & Reel
NTDV20P06LT4G−VF01
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
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