NSS40300MZ4 Datasheet, PDF (5/6 Pages) ON Semiconductor – Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor

NSS40300MZ4
TYPICAL CHARACTERISTICS
1.3
1.2 _{IC/IB = 10}
1.1
1.0
0.9
-40 °C
0.8
0.7
0.6
25°C
0.5
0.4
150°C
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 8. Base-Emitter Saturation Voltage
1.2
1.1 _{IC/IB = 50}
1.0
0.9
0.8
-40 °C
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.2
0.1
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 9. Base-Emitter Saturation Voltage
350
300
250
200
150
100
50
0
0
T_J = 25°C
f_test = 1 MHz
1
2
3
4
5
6
V_EB, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
100
T_J = 25°C
80
f_test = 1 MHz
60
40
20
0
0
5
10
15
20
25
30 35
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
200
180
T_J = 25°C
160
f_test = 1 MHz
V_CE = 10 V
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Current-Gain Bandwidth Product
10
1
0.1
0.01
1
0.5 ms
10 ms
100 ms
1 ms
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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