NSS40300MZ4 Datasheet, PDF (4/6 Pages) ON Semiconductor – Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor

NSS40300MZ4
TYPICAL CHARACTERISTICS
600
500
400
300
200
100
0
0.001
150°C
V_CE = 1 V
25°C
-40 °C
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
700
600
500
400
300
200
100
0
0.001
150°C
V_CE = 4 V
25°C
-40 °C
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1
I_C/I_B = 10
0.1
0.01
150°C
25°C
-40 °C
1
I_C/I_B = 50
0.1
150°C
25°C
-40 °C
0.001
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector-Emitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector-Emitter Saturation Voltage
1
I_C = 2 A
1A
0.1
0.5 A
0.1 A
0.01
1.0E-04 1.0E-03
1.0E-02
1.0E-01
1.2
1.1 V_CE = 2 V
1.0
0.9
0.8
-40 °C
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.2
0.1
0
1.0E+00
0.001
0.01
0.1
1
10
I_B, BASE CURRENT (A)
I_C, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. V_BE(on) Voltage
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