NSR10F30QNXT5G Datasheet, PDF (5/6 Pages) ON Semiconductor – Schottky Diode Optimized

NSR10F30QNXT5G
analysis. This analysis showed that there was no shift in any
of the parameters, forward voltage, reverse leakage current,
and capacitance.
1.2
1
85°C
0.8
0.6
25°C
0.4
−30°C
0.2
0
0
0.1
0.2
0.3
0.4
0.5 0.6
REVERSE VOLTAGE (V)
Figure 6. Reverse Leakage Characteristics
Finally these diodes were placed in the same circuit at 25C
for 1 week of continuous operation. The screen shots below
in Figures 8 and 9 show the operation on the first day of
continuous operation and 5 days respectively.
The graphs below shown below demonstrate the Pre and
Post−Stress characterization graphs and how that there was
no change in the part performance.
1E−01
1E−03
1E−05
1E−07
85°C
25°C
1E−09
−30°C
1E−11
0
10
20
30
40
50
FORWARD VOLTAGE (V)
Figure 7. Forward Current Characterization
To further evaluate the performance, a thermal camera
was used to take pictures of the NSR10F30QNXT5G during
heavy load operation and 25°C. As seen in Figure 10 the
case only got to 29.2°C. This translates to less than 20mW
of total power dissipation.
Figure 8. NSR10F30QNXT5G on Day 1 at 255C
Figure 9. NSR10F30QNXT5G on Day 5 at 255C
Figure 10. Case Temperature of NSR10F30QNXT5G
in Operation at 255C, 150 mA 34 V Output
With a heavy load condition (up to 1.2 A) through the
NSR10F30QNXT5G on a minimum pad size the ambient
temperature can rise up to 145°C and not degrade the
performance. Using ON Semiconductor’s new ultra low
profile Wireless Boost Application Optimized Schottky
diodes will increase the overall efficiency and battery life
while reducing board size and cost associated with thermal
pads.
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