NSR10F30QNXT5G Datasheet, PDF (2/6 Pages) ON Semiconductor – Schottky Diode Optimized

NSR10F30QNXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
228
P_D
548
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
P_D
85
1.47
Storage Temperature Range
T_stg
−40 to +125
Junction Temperature
T_J
+150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
I_R
(V_R = 10 V)
(V_R = 30 V)
Forward Voltage
V_F
(I_F = 0.5 A)
(I_F = 1.0 A)
Reverse Recovery (Special)
T_RR
Switch from Forward Current to Reverse Voltage
Time taken from 1 ns Transition Time to Fully Stabilized
(I_F = 1.5 A to V_R = 28 V, 25°C)
(I_F = 1.5 A to V_R = 28 V, 85°C)
Typ
0.400
0.450
21.98
21.38
Max
Unit
mA
20
100
V
0.420
0.470
ns
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