NSBC123TPDP6 Datasheet, PDF (5/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 2.2 k, R2 =  k

NSBC123TPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC123TPDP6
1
I_C/I_B = 10
25°C
0.1
150°C
1000
100
150°C
25°C
−55°C
−55°C
10
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
1
50
1
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
7
100
6
5
f = 10 kHz
I_E = 0 A
T_A = 25°C
150°C
10
25°C
−55°C
4
1
3
0.1
2
0.01
1
V_O = 5 V
0
0.001
0
10
20
30
40
50
0
1
2
3
V_R, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
V_in, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
150°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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