NSBC123TPDP6 Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 2.2 k, R2 =  k

1
I_C/I_B = 10
25°C
0.1
NSBC123TPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC123TPDP6
1000
150°C
25°C
150°C
100
−55°C
−55°C
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
10
50
1
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
I_E = 0 V
T_A = 25°C
100
150°C
10
25°C
−55°C
1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.1
V_O = 5 V
0.01
50
0
0.4
0.8
1.2
1.6
2.0 2.4
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
10
25°C
1
−55°C
150°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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