NOIS1SM1000S-HHC Datasheet, PDF (5/37 Pages) ON Semiconductor – STAR1000 1M Pixel Radiation Hard CMOS

NOIS1SM1000S, NOIS1SM1000A
TEST PROCEDURE OVERVIEW
Environmental and Endurance Tests
Electrical and electro-optical measurements on completion
of environmental test
The parameters to be measured on completion of
environmental tests are scheduled in Table 21. Unless
otherwise stated, the measurements shall be performed at an
environmental temperature of 22 ±3°C. Measurements of
dark current are performed at 22 ±1°C and the actual
environmental temperature must be reported with the test
results.
Electrical and electro-optical measurements at
intermediate point during endurance test
The parameters to be measured at intermediate points
during endurance test of environmental tests are scheduled
in Table 21. Unless otherwise stated, the measurements shall
be performed at an environmental temperature of 22 ±3°C.
Electrical and electro-optical measurements on completion
of endurance test
The parameters to be measured on completion of
endurance tests are scheduled in Table 21. Unless otherwise
stated, the measurements shall be performed at an
environmental temperature of 22 ±3°C.
Conditions for operating life test
The conditions for operating life tests shall be as specified
in Table 20 of this specification.
Electrical circuits for operating life test
Circuits for performing the operating life test are shown
in Figure 2 of this specification.
Conditions for high temperature storage test
The temperature to be applied shall be the maximum
storage temperature specified in Table 6 of this
specification.
Lot Acceptance and Screening
Lot acceptance and screening are based on the ESA basic
specification ESCC 9020.
This paragraph describes the LAT and screening for the
STAR1000 flight model devices.
Table 1. WAFER LOT ACCEPTANCE (on every fab lot)
Test
Test Method
Number of Devices
Wafer processing
PID
NA
data review
SEM
ESCC 21400
4 devices
Total dose test
ESCC 22900
3 devices
Test Condition
NA
NA
See below
Endurance test
MIL-STD-883 Method 1005 6 devices
See below
Test Location
ON Semiconductor
Test House
Test House by
ON Semiconductor
Test House
Total dose test conditions performed on unscreened devices:
• NOIS1SM1000S-HHC 100KRad at 3.6 Krad/hour
max dose rate, and biased
Endurance test conditions performed on unscreened
devices:
• NOIS1SM1000S-HHC 2000h, biased at +125°C
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