MMBT2222AWT1G Datasheet, PDF (5/6 Pages) ON Semiconductor – General Purpose Transistor

MMBT2222AWT1G, SMMBT2222AWT1G
1
I_C/I_B = 10
150C
0.1
−55C
25C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.3
1.2
I_C/I_B = 10
1.1
1.0
0.9
−55C
0.8
0.7
25C
0.6
0.5
150C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1 V_CE = 1 V
1.0
0.9
−55C
0.8
0.7
25C
0.6
0.5
150C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Voltage vs. Collector
Current
+0.5
0
R_qVC for V_CE(sat)
- 0.5
- 1.0
- 1.5
- 2.0
R_qVB for V_BE
- 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
I_C, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
10
1
Thermal Limit
100 ms
1s
10 ms
1 ms
0.1
0.01
Single Pulse Test
0.001 ^{@ TA = 25C}
0.01
0.1
1
10
100
V_CE (Vdc)
Figure 15. Safe Operating Area
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