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MMBT2222AWT1G Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistor
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MMBT2222AWT1G, SMMBT2222AWT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
−
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
−
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
HFE
35
50
75
100
40
Collector −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
Base −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.6
−
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie
0.25
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
−
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe
75
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hoe
25
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
NF
−
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
td
−
IC = 150 mAdc, IB1 = 15 mAdc)
tr
−
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
−
IB1 = IB2 = 15 mAdc)
tf
−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Max
Unit
Vdc
−
Vdc
−
Vdc
−
nAdc
20
nAdc
10
−
−
−
−
300
−
Vdc
0.3
1.0
Vdc
1.2
2.0
MHz
−
pF
8.0
pF
30
1.25
4.0
kW
X 10− 4
−
375
mmhos
200
dB
4.0
10
ns
25
225
ns
60
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