MMBF4393LT3G Datasheet, PDF (5/6 Pages) ON Semiconductor – JFET Switching Transistors

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
100
90
T_channel = 25°C
10
9.0
80
8.0
70
r_DS(on) @ V_GS = 0
7.0
60
6.0
50
V_GS(off)
5.0
40
4.0
30
3.0
20
2.0
10
1.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
I_DSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of I_DSS on Drain−Source
Resistance and Gate−Source Voltage
NOTE 2
The Zero−Gate−Voltage Drain Current (I_DSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (V_GS(off)) and Drain−Source On Resistance
(r_DS(on)) to I_DSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
r_DS(on) and V_GS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an I_DSS range of 25 to 75 mA. Figure
10 shows r_DS(on) = 52 W for I_DSS = 25 mA and 30 W for
I_DSS = 75 mA. The corresponding V_GS values are 2.2 V
and 4.8 V.
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