MMBF4393LT3G Datasheet, PDF (2/6 Pages) ON Semiconductor – JFET Switching Transistors

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I_G = 1.0 mAdc, V_DS = 0)
Gate Reverse Current
(V_GS = 15 Vdc, V_DS = 0, T_A = 25°C)
(V_GS = 15 Vdc, V_DS = 0, T_A = 100°C)
Gate−Source Cutoff Voltage
(V_DS = 15 Vdc, I_D = 10 nAdc)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Off−State Drain Current
(V_DS = 15 Vdc, V_GS = −12 Vdc)
(V_DS = 15 Vdc, V_GS = −12 Vdc, T_A = 100°C)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V_DS = 15 Vdc, V_GS = 0)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Drain−Source On−Voltage
(I_D = 12 mAdc, V_GS = 0)
MMBF4391LT1, SMMBF4391LT1
(I_D = 6.0 mAdc, V_GS = 0)
MMBF4392LT1
(I_D = 3.0 mAdc, V_GS = 0)
MMBF4393LT1
Static Drain−Source On−Resistance
(I_D = 1.0 mAdc, V_GS = 0)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V_DS = 0 Vdc, V_GS = −15 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(V_DS = 0 Vdc, V_GS = −12 Vdc, f = 1.0 MHz)
Symbol
V_(BR)GSS
I_GSS
V_GS(off)
I_D(off)
I_DSS
V_DS(on)
r_DS(on)
C_iss
C_rss
Min
30
−
−
−4.0
−2.0
−0.5
−
−
50
25
5.0
−
−
−
−
−
−
−
−
Max
Unit
−
Vdc
1.0
nAdc
0.20
mAdc
Vdc
−10
−5.0
−3.0
1.0
nAdc
1.0
mAdc
mAdc
150
75
30
Vdc
0.4
0.4
0.4
W
30
60
100
pF
14
pF
3.5
ORDERING INFORMATION
Device
MMBF4391LT1G
Marking
6J
Package
SOT−23
(Pb−Free)
Shipping^†
SMMBF4391LT1G*
MMBF4392LT1G
6J
SOT−23
(Pb−Free)
3,000 / Tape & Reel
6K
SOT−23
(Pb−Free)
MMBF4393LT1G
M6G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
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