MJF31C Datasheet, PDF (5/8 Pages) ON Semiconductor – 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS

MJF31C* (NPN), MJF32C* (PNP)
500
300
TJ = 150°C
100
25°C
70
-ā55°C
50
30
VCE = 2.0 V
2.0
1.6
1.2
IC = 0.3 A
1.0 A
0.8
TJ = 25°C
3.0 A
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.4
0
3.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
+ā2.5
+ā2.0 *APPLIES FOR IC/IB ≤ hFE/2
+ā1.5
TJ = -ā65°C TO +ā150°C
+ā1.0
+ā0.5
*θ_VC FOR VCE(sat)
0
-ā0.5
-ā1.0
-ā1.5
θ_VB FOR VBE
-ā2.0
-ā2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
103
102
VCE = 30 V
101
TJ = 150°C
100
100°C
10-1
REVERSE
FORWARD
10-2
25°C
10-3
-ā0.4 -ā0.3 -ā0.2 -ā0.1
ICES
0 +ā0.1 +ā0.2 +ā0.3 +ā0.4 +ā0.5 +ā0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
107
106
105 ^{IC ≈ ICES}
IC = 10 x ICES
VCE = 30 V
104
IC = 2 x ICES
103
102
20
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40
60
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base–Emitter Resistance
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