MJF31C Datasheet, PDF (4/8 Pages) ON Semiconductor – 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS

MJF31C* (NPN), MJF32C* (PNP)
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 _0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 1.0 0.2
Z_θJC(t) = r(t) R_θJC
R_θJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) Z_θJC(t)
0.5 1.0 2.0
5.0 10 20
50
t, TIME (ms)
Figure 4. Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 200
500 1.0 k
10
5.0
100õs
5.0Ăms
2.0
1.0
SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C
0.5
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
0.2 CURVES APPLY
BELOW RATED VCEO
MJF31C,
MJF32C
0.1
5.0
10
20
1.0Ăms
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
3.0
2.0
ts′
1.0
tf @ VCC = 30 V
0.7
0.5
0.3 tf @ VCC = 10 V
0.2
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
2.0 3.0
300
TJ = +ā25°C
200
100
Ceb
70
50
Ccb
30
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
4