MJD2955-1G Datasheet, PDF (5/7 Pages) ON Semiconductor – Complementary Power Transistors

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
2
T_J = 25C
1.6
1.2
V_BE(sat) @ I_C/I_B = 10
0.8
V_BE @ V_CE = 3 V
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.1
0.2 0.3 0.5
1
23 5
10
I_C, COLLECTOR CURRENT (AMP)
Figure 6. “On” Voltages, MJD2955
V_CC
+ 30 V
25 ms
+11 V
R_C
0
R_B
SCOPE
- 9 V
t_r, t_f  10 ns
51
D₁
DUTY CYCLE = 1%
- 4 V
R_B and R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D₁ MUST BE FAST RECOVERY TYPE, eg:
 1N5825 USED ABOVE I_B  100 mA
 MSD6100 USED BELOW I_B  100 mA
Figure 7. Switching Time Test Circuit
1
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1 _0.05
0.07
0.02
0.05
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
R_qJC(t) = r(t) R_qJC
R_qJC = 6.25C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5 1
23 5
10
20 30 50
t, TIME (ms)
Figure 8. Thermal Response
100 200 300 500 1 k
10
5
3
2
1
0.5
0.3
0.1
0.05
0.03
0.02
0.01
0.6
T_J = 150C
100 ms
1 ms
5 ms
500 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT T_C = 25C (D = 0.1)
SECOND BREAKDOWN LIMIT
1
2
4 6 10
20
40 60
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Maximum Forward Bias
Safe Operating Area
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T_J(pk) v 150_C. T_J(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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