MJD2955-1G Datasheet, PDF (1/7 Pages) ON Semiconductor – Complementary Power Transistors

MJD2955,
NJVMJD2955T4G (PNP)
MJD3055,
NJVMJD3055T4G (NPN)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 Straight Lead Version in Plastic Sleeves (“−1” Suffix)
 Electrically Similar to MJE2955 and MJE3055
 DC Current Gain Specified to 10 Amperes
 High Current Gain−Bandwidth Product − f_T = 2.0 MHz (Min) @ I_C
= 500 mAdc
 Epoxy Meets UL 94 V−0 @ 0.125 in
 ESD Ratings:
 Human Body Model, 3B > 8000 V
 Machine Model, C > 400 V
 NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
 These are Pb−Free Packages*
http://onsemi.com
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
DPAK
CASE 369C
STYLE 1
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J
xx55G
AYWW
J
xx55G
DPAK
IPAK
A
= Assembly Location
Y
= Year
WW = Work Week
Jxx55 = Device Code
x = 29 or 30
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
1
February, 2012 − Rev. 12
Publication Order Number:
MJD2955/D