|
MJD253 Datasheet, PDF (5/8 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistor | |||
|
◁ |
MJD243 (NPN), MJD253 (PNP)
NPN
MJD243
PNP
MJD253
500
300 TJ = 150°C
200
25°C
100
70
â55 °C
50
VCE = 1.0 V
VCE = 2.0 V
200
TJ = 150°C
100
70
25°C
50
â55 °C
30
20
VCE = 1.0 V
VCE = 2.0 V
30
20
10
7.0
5.0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0
4.0
10
7.0
5.0
3.0
2.0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0 4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. DC Current Gain
1.4
TJ = 25°C
1.2
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 1.0 V
1.0
VBE(sat) @ IC/IB = 10
0.8
0.6
VBE @ VCE = 1.0 V
0.4
IC/IB = 10
5.0
0.2
VCE(sat)
0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0
4.0
0.4
0.2
VCE(sat)
0
0.04 0.06 0.1
0.2
IC/IB = 10
5.0
0.4 0.6 1.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 5. âOnâ Voltages
â1.0
â1.5
â2.0 qVB FOR VBE
25°C to 150°C
â55 °C to 25°C
â2.5
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0 4.0
IC, COLLECTOR CURRENT (AMP)
+2.5
+2.0
*APPLIES FOR IC/IB ⤠hFE/3
+1.5
+1.0
25°C to 150°C
+0.5 *qVC FOR VCE(sat)
0
â0.5
â55 °C to 25°C
â1.0
25°C to 150°C
â1.5 qVB FOR VBE
â2.0
â55 °C to 25°C
â2.5
0.04 0.06 0.1
0.2
0.4 0.6 1.0 2.0
4.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
http://onsemi.com
5
|
▷ |