MJD253 Datasheet, PDF (1/8 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistor

MJD243 (NPN),
MJD253 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 100 Vdc (Min) @ I_C
= 10 mAdc
• High DC Current Gain −
h_FE = 40 (Min) @ I_C
= 200 mAdc
= 15 (Min) @ I_C = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 0.3 Vdc (Max) @ I_C
= 500 mAdc
= 0.6 Vdc (Max) @ I_C = 1.0 Adc
• High Current−Gain − Bandwidth Product −
f_T = 40 MHz (Min) @ I_C
= 100 mAdc
• Annular Construction for Low Leakage −
I_CBO = 100 nAdc @ Rated V_CB
• Epoxy Meets UL 94, V−0 @ 0.125 in.
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Package is Available
http://onsemi.com
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
4
Base 1
Collector ²
Emitter ³
DPAK−3
CASE 369D
STYLE 1
4
12
3
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAMS
YWW
J2x3
YWW
J2x3
Y = Year
WW = Work Week
J2x3 = Device Code
x = 4 or 5
ORDERING INFORMATION
Device
Package
Shipping^†
MJD243
DPAK−3
75 Units/Rail
MJD243T4
MJD243T4G
DPAK−3
DPAK−3
(Pb−Free)
2500/Tape & Reel
2500/Tape & Reel
MJD253−1
DPAK−3
75 Units/Rail
MJD253T4
DPAK−3 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
March, 2004 − Rev. 8
Publication Order Number:
MJD243/D