MJD112_06 Datasheet, PDF (5/8 Pages) ON Semiconductor – Complementary Darlington Power Transistors

MJD112 (NPN) MJD117 (PNP)
NPN MJD112
PNP MJD117
+0.8
*APPLIED FOR I_C/I_B < h_FE/3
0
−0.8
−1.6
−2.4 ^{*qVC FOR VCE(sat)}
−3.2
q_VC FOR V_BE
−4
25°C TO 150°C
−55 °C TO 25°C
25°C TO 150°C
−55 °C TO 25°C
+0.8
*APPLIES FOR I_C/I_B < h_FE/3
0
25°C TO 150°C
−0.8
−1.6 _{*qVC FOR VCE(sat)}
−2.4
−3.2
−4 ^{qVB FOR VBE}
−55 °C TO 25°C
25°C TO 150°C
−55 °C TO 25°C
−4.8
−4.8
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
10⁵
REVERSE
10⁴
FORWARD
10⁵
REVERSE
10⁴
FORWARD
10³
V_CE = 30 V
10³
V_CE = 30 V
10²
T_J = 150°C
10¹
10⁰
100°C
10²
T_J = 150°C
10¹
100°C
10⁰
25°C
10^−1
−0.6 −0.4
25°C
−0.2 0 +0.2 +0.4 +0.6 +0.8 +1
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
+1.2 +1.4
10^−1
+0.6 +0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut−Off Region
−1.2 −1.4
PNP
COLLECTOR
NPN
COLLECTOR
BASE
BASE
≈ 8 k ≈ 120
≈ 8 k ≈ 120
EMITTER
Figure 12. Darlington Schematic
EMITTER
http://onsemi.com
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