MGP11N60ED Datasheet, PDF (5/6 Pages) ON Semiconductor – SHORT CIRCUIT RATED LOW ON-VOLTAGE

VCC = 360 V
0.6
W ^{VGE = 15 V}
RG = 20
0.4
0.2
IC = 8.0 A
TJ = 125°C
0.6 _{VCC = 360 V}
W ^{VGE = 15 V}
RG = 20
0.4
6.0 A
4.0 A
0.2
MGP11N60ED
0
–50 –25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Turn–Off Losses versus
Junction Temperature
100
0
0
2
4
6
8
10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Turn–Off Losses versus
Collector Current
100
TJ = 125°C
25°C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
Figure 13. Forward Characteristics
versus Current
10
W ^{TJ = 125°C}
RGE = 20
VGE = 15 V
1
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data
5