MC74VHC595_15 Datasheet, PDF (5/11 Pages) ON Semiconductor – 8-Bit Shift Register with Output Storage Register

MC74VHC595
The q_JA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 1. Failure Rate vs. Time
Junction Temperature
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V_CC
Test Conditions (V)
T_A = 25°C
Min
Typ
Max
T_A = ≤ 85°C
Min Max
T_A = ≤ 125°C
Min Max _Unit
V_IH Minimum High−Level
Input Voltage
2.0
1.5
3.0
2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
V_IL Maximum Low−Level
Input Voltage
2.0
0.59
0.59
0.59 V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V_OH Minimum High−Level V_IN = V_IH or V_IL
2.0
Output Voltage
I_OH = − 50 μA
3.0
V_IN = V_IH or V_IL
4.5
V_IN = V_IH or V_IL
I_OH = −4 mA
3.0
I_OH = −8 mA
4.5
V_OL Maximum Low−Level V_IN = V_IH or V_IL
2.0
Output Voltage
I_OL = 50 μA
3.0
V_IN = V_IH or V_IL
4.5
V_IN = V_IH or V_IL
I_OL = 4 mA
3.0
I_OL = 8 mA
4.5
I_IN Maximum Input
Leakage Current
V_IN = 5.5 V or GND 0 to
5.5
1.9
2.9
4.4
2.58
3.94
2.0
1.9
1.9
V
3.0
2.9
2.9
4.5
4.4
4.4
2.48
2.34
3.80
3.66
0.0
0.1
0.1
0.1
V
0.0
0.1
0.1
0.1
0.0
0.1
0.1
0.1
0.36
0.36
± 0.1
0.44
0.44
± 1.0
0.52
0.52
± 1.0 μA
I_CC Maximum Quiescent V_IN = V_CC or GND 5.5
Supply Current
4.0
40.0
40.0 μA
I_OZ Three−State Output V_IN = V_IH or V_IL
5.5
Off−State Current
V_OUT = V_CC or
GND
± 0.25
± 2.5
± 2.5 μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
5