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MC74LVXT8051_05 Datasheet, PDF (5/12 Pages) ON Semiconductor – Analog Multiplexer / Demultiplexer High−Performance Silicon−Gate CMOS
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MC74LVXT8051
ADDITIONAL APPLICATION CHARACTERISTICS (GND = 0 V)
Symbol
Parameter
VCC
Condition
V
BW Maximum On−Channel Bandwidth or fin = 1MHz Sine Wave; Adjust fin Voltage to Obtain
Minimum Frequency Response
(Figure 6)
0dBm at VOS; Increase fin Frequency Until dB Meter
Reads −3dB;
3.0
RL = 50W, CL = 10pF
4.5
5.5
−
Off−Channel Feedthrough Isolation fin = Sine Wave; Adjust fin Voltage to Obtain 0dBm at
3.0
(Figure 7)
VIS
4.5
fin = 10kHz, RL = 600W, CL = 50pF
5.5
3.0
4.5
fin = 1.0MHz, RL = 50W, CL = 10pF
5.5
−
Feedthrough Noise. Channel−Select Vin ≤ 1MHz Square Wave (tr = tf = 3ns); Adjust RL at
3.0
Input to Common I/O (Figure 8)
Setup so that IS = 0A;
4.5
Enable = GND
RL = 600W, CL = 50pF
5.5
3.0
4.5
RL = 10kW, CL = 10pF
5.5
−
Crosstalk Between Any Two
Switches (Figure 12)
fin = Sine Wave; Adjust fin Voltage to Obtain 0dBm at
3.0
VIS
4.5
fin = 10kHz, RL = 600W, CL = 50pF
5.5
3.0
4.5
fin = 1.0MHz, RL = 50W, CL = 10pF
5.5
THD Total Harmonic Distortion
(Figure 14)
fin = 1kHz, RL = 10kW, CL = 50pF
THD = THDmeasured − THDsource
VIS = 2.0VPP sine wave
3.0
VIS = 4.0VPP sine wave
4.5
VIS = 5.0VPP sine wave
5.5
*Limits not tested. Determined by design and verified by qualification.
Limit*
25°C
80
80
80
−50
−50
−50
−37
−37
−37
25
105
135
35
145
190
−50
−50
−50
−60
−60
−60
0.10
0.08
0.05
Unit
MHz
dB
mVPP
dB
%
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